@inproceedings{7914629fc85e472ea22fe668a43e3cdc,
title = "On the origin of the mobility reduction in bulk-Si, UTBOX-FDSOI and SiGe devices with ultrathin-EOT dielectrics",
abstract = "The effects of ultrathin EOT on the carrier mobility in bulk-Si, UTBOX-FDSOI and SiGe-QW pFET devices were compared. The mobility is found to decrease dramatically with the EOT (Tinv) as a result of stronger charge and surface roughness scattering at thinner SiOx interface layers irrespective of the device technology. UTBOX-FDSOI and bulk-Si nFETs have identical mobility values (190 cm2/Vs) at Tinv12.5. In the UTBOX-FDSOI device architecture, a positive back gate bias provides a strong enhancement in electron mobility. In SiGe-QW pFET devices, a 150% improvement in hole-mobility is observed with low thermal budget laser-anneal (LA).",
author = "Ragnarsson, {L. A.} and J. Mitard and T. Kauerauf and {De Keersgieter}, A. and T. Schram and E. Rohr and N. Collaert and M. Jurczak and Hong, {S. H.} and J. Tseng and Wang, {W. E.} and L. Trojman and Bourdelle, {K. K.} and Nguyen, {B. Y.} and P. Absil and Hoffmann, {T. Y.}",
year = "2011",
doi = "10.1109/VTSA.2011.5872255",
language = "Ingl{\'e}s",
isbn = "9781424484928",
series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",
pages = "116--117",
booktitle = "Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011",
note = "2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 ; Conference date: 25-04-2011 Through 27-04-2011",
}