Origins and implications of increased channel hot carrier variability in nFinFETs

B. Kaczer, J. Franco, M. Cho, T. Grasser, Ph J. Roussel, S. Tyaginov, M. Bina, Y. Wimmer, L. M. Procel, L. Trojman, F. Crupi, G. Pitner, V. Putcha, P. Weckx, E. Bury, Z. Ji, A. De Keersgieter, T. Chiarella, N. Horiguchi, G. GroesenekenA. Thean

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

30 Citas (Scopus)

Resumen

Channel hot carrier (CHC) stress is observed to result in higher variability of degradation in deeply-scaled nFinFETs than bias temperature instability (BTI) stress. Potential sources of this increased variation are discussed and the intrinsic time-dependent variability component is extracted using a novel methodology based on matched pairs. It is concluded that in deeply-scaled devices, CHC-induced time-dependent distributions will be bimodal, pertaining to bulk charging and to interface defect generation, respectively. The latter, high-impact mode will control circuit failure fractions at high percentiles.

Idioma originalInglés
Título de la publicación alojada2015 IEEE International Reliability Physics Symposium, IRPS 2015
EditorialInstitute of Electrical and Electronics Engineers Inc.
Páginas3B51-3B56
ISBN (versión digital)9781467373623
DOI
EstadoPublicada - 26 may. 2015
EventoIEEE International Reliability Physics Symposium, IRPS 2015 - Monterey, Estados Unidos
Duración: 19 abr. 201523 abr. 2015

Serie de la publicación

NombreIEEE International Reliability Physics Symposium Proceedings
Volumen2015-May
ISSN (versión impresa)1541-7026

Conferencia

ConferenciaIEEE International Reliability Physics Symposium, IRPS 2015
País/TerritorioEstados Unidos
CiudadMonterey
Período19/04/1523/04/15

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