Origins and implications of increased channel hot carrier variability in nFinFETs

B. Kaczer; J. Franco; M. Cho; T. Grasser; Ph J. Roussel; S. Tyaginov; M. Bina; Y. Wimmer; L. M. Procel; L. Trojman; F. Crupi; G. Pitner; V. Putcha; P. Weckx; E. Bury; Z. Ji; A. De Keersgieter; T. Chiarella; N. Horiguchi; G. Groeseneken; A. Thean

doi:10.1109/IRPS.2015.7112706

Origins and implications of increased channel hot carrier variability in nFinFETs

B. Kaczer, J. Franco, M. Cho, T. Grasser, Ph J. Roussel, S. Tyaginov, M. Bina, Y. Wimmer, L. M. Procel, L. Trojman, F. Crupi, G. Pitner, V. Putcha, P. Weckx, E. Bury, Z. Ji, A. De Keersgieter, T. Chiarella, N. Horiguchi, G. GroesenekenA. Thean

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

33 Citas (Scopus)

Resumen

Channel hot carrier (CHC) stress is observed to result in higher variability of degradation in deeply-scaled nFinFETs than bias temperature instability (BTI) stress. Potential sources of this increased variation are discussed and the intrinsic time-dependent variability component is extracted using a novel methodology based on matched pairs. It is concluded that in deeply-scaled devices, CHC-induced time-dependent distributions will be bimodal, pertaining to bulk charging and to interface defect generation, respectively. The latter, high-impact mode will control circuit failure fractions at high percentiles.

Idioma original	Inglés
Título de la publicación alojada	2015 IEEE International Reliability Physics Symposium, IRPS 2015
Editorial	Institute of Electrical and Electronics Engineers Inc.
Páginas	3B51-3B56
ISBN (versión digital)	9781467373623
DOI	https://doi.org/10.1109/IRPS.2015.7112706
Estado	Publicada - 26 may. 2015
Evento	IEEE International Reliability Physics Symposium, IRPS 2015 - Monterey, Estados Unidos Duración: 19 abr. 2015 → 23 abr. 2015

Serie de la publicación

Nombre	IEEE International Reliability Physics Symposium Proceedings
Volumen	2015-May
ISSN (versión impresa)	1541-7026

Conferencia

Conferencia	IEEE International Reliability Physics Symposium, IRPS 2015
País/Territorio	Estados Unidos
Ciudad	Monterey
Período	19/04/15 → 23/04/15

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10.1109/IRPS.2015.7112706

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Kaczer, B., Franco, J., Cho, M., Grasser, T., Roussel, P. J., Tyaginov, S., Bina, M., Wimmer, Y., Procel, L. M., Trojman, L., Crupi, F., Pitner, G., Putcha, V., Weckx, P., Bury, E., Ji, Z., De Keersgieter, A., Chiarella, T., Horiguchi, N., ... Thean, A. (2015). Origins and implications of increased channel hot carrier variability in nFinFETs. En 2015 IEEE International Reliability Physics Symposium, IRPS 2015 (pp. 3B51-3B56). Artículo 7112706 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2015-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2015.7112706

@inproceedings{48606c2a5fee44b3b1b03568fadd54f1,

title = "Origins and implications of increased channel hot carrier variability in nFinFETs",

abstract = "Channel hot carrier (CHC) stress is observed to result in higher variability of degradation in deeply-scaled nFinFETs than bias temperature instability (BTI) stress. Potential sources of this increased variation are discussed and the intrinsic time-dependent variability component is extracted using a novel methodology based on matched pairs. It is concluded that in deeply-scaled devices, CHC-induced time-dependent distributions will be bimodal, pertaining to bulk charging and to interface defect generation, respectively. The latter, high-impact mode will control circuit failure fractions at high percentiles.",

keywords = "Bias Temperature Instability (BTI), Channel Hot Carriers (CHC), FinFETs, Time-Dependent Variability",

author = "B. Kaczer and J. Franco and M. Cho and T. Grasser and Roussel, {Ph J.} and S. Tyaginov and M. Bina and Y. Wimmer and Procel, {L. M.} and L. Trojman and F. Crupi and G. Pitner and V. Putcha and P. Weckx and E. Bury and Z. Ji and {De Keersgieter}, A. and T. Chiarella and N. Horiguchi and G. Groeseneken and A. Thean",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE International Reliability Physics Symposium, IRPS 2015 ; Conference date: 19-04-2015 Through 23-04-2015",

year = "2015",

month = may,

day = "26",

doi = "10.1109/IRPS.2015.7112706",

language = "Ingl{\'e}s",

series = "IEEE International Reliability Physics Symposium Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "3B51--3B56",

booktitle = "2015 IEEE International Reliability Physics Symposium, IRPS 2015",

}

Kaczer, B, Franco, J, Cho, M, Grasser, T, Roussel, PJ, Tyaginov, S, Bina, M, Wimmer, Y, Procel, LM, Trojman, L, Crupi, F, Pitner, G, Putcha, V, Weckx, P, Bury, E, Ji, Z, De Keersgieter, A, Chiarella, T, Horiguchi, N, Groeseneken, G & Thean, A 2015, Origins and implications of increased channel hot carrier variability in nFinFETs. En 2015 IEEE International Reliability Physics Symposium, IRPS 2015., 7112706, IEEE International Reliability Physics Symposium Proceedings, vol. 2015-May, Institute of Electrical and Electronics Engineers Inc., pp. 3B51-3B56, IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, Estados Unidos, 19/04/15. https://doi.org/10.1109/IRPS.2015.7112706

Origins and implications of increased channel hot carrier variability in nFinFETs. / Kaczer, B.; Franco, J.; Cho, M. et al.
2015 IEEE International Reliability Physics Symposium, IRPS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 3B51-3B56 7112706 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2015-May).

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

TY - GEN

T1 - Origins and implications of increased channel hot carrier variability in nFinFETs

AU - Kaczer, B.

AU - Franco, J.

AU - Cho, M.

AU - Grasser, T.

AU - Roussel, Ph J.

AU - Tyaginov, S.

AU - Bina, M.

AU - Wimmer, Y.

AU - Procel, L. M.

AU - Trojman, L.

AU - Crupi, F.

AU - Pitner, G.

AU - Putcha, V.

AU - Weckx, P.

AU - Bury, E.

AU - Ji, Z.

AU - De Keersgieter, A.

AU - Chiarella, T.

AU - Horiguchi, N.

AU - Groeseneken, G.

AU - Thean, A.

PY - 2015/5/26

Y1 - 2015/5/26

N2 - Channel hot carrier (CHC) stress is observed to result in higher variability of degradation in deeply-scaled nFinFETs than bias temperature instability (BTI) stress. Potential sources of this increased variation are discussed and the intrinsic time-dependent variability component is extracted using a novel methodology based on matched pairs. It is concluded that in deeply-scaled devices, CHC-induced time-dependent distributions will be bimodal, pertaining to bulk charging and to interface defect generation, respectively. The latter, high-impact mode will control circuit failure fractions at high percentiles.

AB - Channel hot carrier (CHC) stress is observed to result in higher variability of degradation in deeply-scaled nFinFETs than bias temperature instability (BTI) stress. Potential sources of this increased variation are discussed and the intrinsic time-dependent variability component is extracted using a novel methodology based on matched pairs. It is concluded that in deeply-scaled devices, CHC-induced time-dependent distributions will be bimodal, pertaining to bulk charging and to interface defect generation, respectively. The latter, high-impact mode will control circuit failure fractions at high percentiles.

KW - Bias Temperature Instability (BTI)

KW - Channel Hot Carriers (CHC)

KW - FinFETs

KW - Time-Dependent Variability

UR - http://www.scopus.com/inward/record.url?scp=84942879285&partnerID=8YFLogxK

U2 - 10.1109/IRPS.2015.7112706

DO - 10.1109/IRPS.2015.7112706

M3 - Contribución a la conferencia

AN - SCOPUS:84942879285

T3 - IEEE International Reliability Physics Symposium Proceedings

SP - 3B51-3B56

BT - 2015 IEEE International Reliability Physics Symposium, IRPS 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE International Reliability Physics Symposium, IRPS 2015

Y2 - 19 April 2015 through 23 April 2015

ER -

Kaczer B, Franco J, Cho M, Grasser T, Roussel PJ, Tyaginov S et al. Origins and implications of increased channel hot carrier variability in nFinFETs. En 2015 IEEE International Reliability Physics Symposium, IRPS 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 3B51-3B56. 7112706. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/IRPS.2015.7112706

Origins and implications of increased channel hot carrier variability in nFinFETs

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