@inproceedings{48606c2a5fee44b3b1b03568fadd54f1,
title = "Origins and implications of increased channel hot carrier variability in nFinFETs",
abstract = "Channel hot carrier (CHC) stress is observed to result in higher variability of degradation in deeply-scaled nFinFETs than bias temperature instability (BTI) stress. Potential sources of this increased variation are discussed and the intrinsic time-dependent variability component is extracted using a novel methodology based on matched pairs. It is concluded that in deeply-scaled devices, CHC-induced time-dependent distributions will be bimodal, pertaining to bulk charging and to interface defect generation, respectively. The latter, high-impact mode will control circuit failure fractions at high percentiles.",
keywords = "Bias Temperature Instability (BTI), Channel Hot Carriers (CHC), FinFETs, Time-Dependent Variability",
author = "B. Kaczer and J. Franco and M. Cho and T. Grasser and Roussel, \{Ph J.\} and S. Tyaginov and M. Bina and Y. Wimmer and Procel, \{L. M.\} and L. Trojman and F. Crupi and G. Pitner and V. Putcha and P. Weckx and E. Bury and Z. Ji and \{De Keersgieter\}, A. and T. Chiarella and N. Horiguchi and G. Groeseneken and A. Thean",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE International Reliability Physics Symposium, IRPS 2015 ; Conference date: 19-04-2015 Through 23-04-2015",
year = "2015",
month = may,
day = "26",
doi = "10.1109/IRPS.2015.7112706",
language = "Ingl{\'e}s",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "3B51--3B56",
booktitle = "2015 IEEE International Reliability Physics Symposium, IRPS 2015",
}