Performance assessment of (1 1 0) p-FET high-κ/MG: is it mobility or series resistance limited?

L. Trojman, L. Pantisano, S. Severi, E. San Andres, T. Hoffman, I. Ferain, S. De Gendt, M. Heyns, H. Maes, G. Groeseneken

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

6 Citas (Scopus)

Resumen

In this article the impact of Si-substrate orientation on mobility performance is studied for p-MOSFET's with both HfSiON and SiON based dielectrics. Consistent with previous studies, the Ion at fixed Ioff is 100% larger for Si(1 1 0) larger than for standard Si(1 0 0). A thorough analysis of the factors influencing Ion (EOT, mobility and Rseries) for short channel devices (until Lmet = 80 nm) indicates that a 200% increase of the mobility at high Vg is the source of this performance enhancement. The lower Ion increase (only 100%) compared to what is expected from the mobility is only explained by a larger impact of the Rseries (70% of the total resistance) for short channel devices. As a result additional room for Ion improvement can be reached by device and Rseries optimization.

Idioma originalInglés
Páginas (desde-hasta)2058-2062
Número de páginas5
PublicaciónMicroelectronic Engineering
Volumen84
N.º9-10
DOI
EstadoPublicada - sep. 2007
Publicado de forma externa

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