Reactive Sputtered P-type Cu_xO_y Thin Film Semiconductor for Cu_xO_y/c-Si Heterojuntion Diode Application

Integrating a novel semiconductor is relevant for the development of advanced heterojunction devices. This study focuses on the synthesis and characterization of copper oxide thin films as a p-type semiconductor (CuxOy). This material is recognized its non-toxicity, its natural abundance on earth, and favorable properties to be used in optoelectronic devices. The main objective is the optimal deposition of CuxOy thin films by reactive direct current (DC) magnetron sputtering. A key challenge addressed is the precise control of deposition parameters: oxygen and argon partial pressure, deposition time, and sputtering power which selectively formed the following phases: tenorite (CuO), cuprite (Cu2O), and paramelaconite (Cu4O3) over other copper oxide variants. The synthesized films were subjected to different characterization methods, which are: X-ray diffraction (XRD) to verify the crystalline structure and the purity of the phases. The atomic force microscopy (AFM) was used to evaluate the surface morphology. Several TLMs test devices and heterojunction diodes were fabricated, I-V measurements were performed to analyze their electrical properties. This work provides crucial information about the relationships between the structure and the properties of the sputtered CuxOy, which will help for future applications in optoelectronic devices.