Reliability in GaN-based devices for power applications

Eliana Acurio, Lionel Trojman, Felice Crupi, Ferdinando Iucolano, Nicolo Ronchi, Brice De Jaeger, Benoit Bakeroot, Stefaan Decoutere

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2 Citas (Scopus)


This paper analyzes two important reliability issues in AlGaN/GaN devices: positive bias temperature instability (PBTI) and time-dependent dielectric breakdown (TDDB). The summarized results of our previous PBTI studies in MOS-HEMTs show that the threshold voltage degradation in devices with SiO 2 as gate dielectric is characterized by a universal decreasing behavior of the trapping rate parameter and is ascribed to charge trapping in the SiO 2 and at the SiO 2 /GaN interface. On the contrary, the degradation observed in Al 2 O 3 -and AlN/Al 2 O 3 -gate stacks is mainly attributed to charge capture in the pre-existing dielectric traps with a negligible interface state generation. Additionally, the insertion of a thin AlN layer impacts on the device reliability because larger trap density, faster charge trapping, wider trap energy distribution and slower charge release are observed compared with devices without this layer. The dielectric importance of GaN-based devices has been also investigated in Schottky Barrier Diodes (SBDs) with a gated edge termination (GET). Our recent TDDB results indicate a narrower Weibull distribution, and a longer time to failure in devices with a double GET layer structure and with a thick passivation layer (2 GET-THICK) than in single GET devices with a thin passivation (1 GET-THIN). Therefore, the former structure is more suitable for high-power and high-Temperature applications.

Idioma originalInglés
Título de la publicación alojada2018 IEEE 3rd Ecuador Technical Chapters Meeting, ETCM 2018
EditorialInstitute of Electrical and Electronics Engineers Inc.
ISBN (versión digital)9781538666579
EstadoPublicada - 17 dic. 2018
Evento3rd IEEE Ecuador Technical Chapters Meeting, ETCM 2018 - Cuenca, Ecuador
Duración: 15 oct. 201819 oct. 2018

Serie de la publicación

Nombre2018 IEEE 3rd Ecuador Technical Chapters Meeting, ETCM 2018


Conferencia3rd IEEE Ecuador Technical Chapters Meeting, ETCM 2018


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