Resistive Switching Model of OxRAM Devices Based on Intrinsic Electrical Parameters

Silvana Guitarra, Lionel Trojman, Laurent Raymond

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Resumen

In this work, a model for the resistive switching of ReRAM devices that considers the electrical signal of the measurement element is developed. This model works for bipolar devices that have filamentary-type conduction and it is based on the circuit representation of the conductive filament (CF). The stochastic nature of the switching process, observed in experimental data, has been included by using a switching probability to control CF changes, and therefore, the ReRAM's state. For calibration, the analysis of current-voltage curves of devices of six different areas (nm2range) has been done. Good agreement between the experimental results and the model simulation were found.

Idioma originalInglés
Título de la publicación alojadaLatin American Electron Devices Conference, LAEDC 2019
EditorialInstitute of Electrical and Electronics Engineers Inc.
ISBN (versión digital)9781728122168
DOI
EstadoPublicada - 14 may. 2019
Evento2019 Latin American Electron Devices Conference, LAEDC 2019 - Armenia, Quindio, Colombia
Duración: 24 feb. 201927 feb. 2019

Serie de la publicación

NombreLatin American Electron Devices Conference, LAEDC 2019

Conferencia

Conferencia2019 Latin American Electron Devices Conference, LAEDC 2019
País/TerritorioColombia
CiudadArmenia, Quindio
Período24/02/1927/02/19

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