Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs

J. Franco; B. Kaczer; S. Mukhopadhyay; P. Duhan; P. Weckx; Ph J. Roussel; T. Chiarella; L. A. Ragnarsson; L. Trojman; N. Horiguchi; A. Spessot; D. Linten; A. Mocuta

doi:10.1109/IEDM.2016.7838422

Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs

J. Franco, B. Kaczer, S. Mukhopadhyay, P. Duhan, P. Weckx, Ph J. Roussel, T. Chiarella, L. A. Ragnarsson, L. Trojman, N. Horiguchi, A. Spessot, D. Linten, A. Mocuta

Universidad San Francisco de Quito USFQ

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

10 Citas (Scopus)

Resumen

We study the stochastic NBTI degradation of p-FinFETs, in terms of ΔVth, ΔSS, and Δgm. We extend our Defect-Centric model to describe also the SS distribution in a population of devices of any area, at any stage of product aging. A large fraction of nanoscale devices is found to show a peak gm improvement after stress. We explain this effect in terms of the interaction of individual defects with the percolative channel conduction, and we propose a statistical description of gm aging. Our Vth, SS, and gm aging models are pluggable into reliability-enabled compact models to estimate design margins for a wide variety of circuits.

Idioma original	Inglés
Título de la publicación alojada	2016 IEEE International Electron Devices Meeting, IEDM 2016
Editorial	Institute of Electrical and Electronics Engineers Inc.
Páginas	15.3.1-15.3.4
ISBN (versión digital)	9781509039012
DOI	https://doi.org/10.1109/IEDM.2016.7838422
Estado	Publicada - 31 ene. 2017
Evento	62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, Estados Unidos Duración: 3 dic. 2016 → 7 dic. 2016

Serie de la publicación

Nombre	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (versión impresa)	0163-1918

Conferencia

Conferencia	62nd IEEE International Electron Devices Meeting, IEDM 2016
País/Territorio	Estados Unidos
Ciudad	San Francisco
Período	3/12/16 → 7/12/16

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10.1109/IEDM.2016.7838422

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Franco, J., Kaczer, B., Mukhopadhyay, S., Duhan, P., Weckx, P., Roussel, P. J., Chiarella, T., Ragnarsson, L. A., Trojman, L., Horiguchi, N., Spessot, A., Linten, D., & Mocuta, A. (2017). Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs. En 2016 IEEE International Electron Devices Meeting, IEDM 2016 (pp. 15.3.1-15.3.4). Artículo 7838422 (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2016.7838422

Franco, J. ; Kaczer, B. ; Mukhopadhyay, S. et al. / Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs. 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 15.3.1-15.3.4 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{1df77024ccad4f7292d73c3145bb2145,

title = "Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs",

abstract = "We study the stochastic NBTI degradation of p-FinFETs, in terms of ΔVth, ΔSS, and Δgm. We extend our Defect-Centric model to describe also the SS distribution in a population of devices of any area, at any stage of product aging. A large fraction of nanoscale devices is found to show a peak gm improvement after stress. We explain this effect in terms of the interaction of individual defects with the percolative channel conduction, and we propose a statistical description of gm aging. Our Vth, SS, and gm aging models are pluggable into reliability-enabled compact models to estimate design margins for a wide variety of circuits.",

author = "J. Franco and B. Kaczer and S. Mukhopadhyay and P. Duhan and P. Weckx and Roussel, {Ph J.} and T. Chiarella and Ragnarsson, {L. A.} and L. Trojman and N. Horiguchi and A. Spessot and D. Linten and A. Mocuta",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 62nd IEEE International Electron Devices Meeting, IEDM 2016 ; Conference date: 03-12-2016 Through 07-12-2016",

year = "2017",

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day = "31",

doi = "10.1109/IEDM.2016.7838422",

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Franco, J, Kaczer, B, Mukhopadhyay, S, Duhan, P, Weckx, P, Roussel, PJ, Chiarella, T, Ragnarsson, LA, Trojman, L, Horiguchi, N, Spessot, A, Linten, D & Mocuta, A 2017, Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs. En 2016 IEEE International Electron Devices Meeting, IEDM 2016., 7838422, Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., pp. 15.3.1-15.3.4, 62nd IEEE International Electron Devices Meeting, IEDM 2016, San Francisco, Estados Unidos, 3/12/16. https://doi.org/10.1109/IEDM.2016.7838422

Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs. / Franco, J.; Kaczer, B.; Mukhopadhyay, S. et al.
2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 15.3.1-15.3.4 7838422 (Technical Digest - International Electron Devices Meeting, IEDM).

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

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T1 - Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs

AU - Franco, J.

AU - Kaczer, B.

AU - Mukhopadhyay, S.

AU - Duhan, P.

AU - Weckx, P.

AU - Roussel, Ph J.

AU - Chiarella, T.

AU - Ragnarsson, L. A.

AU - Trojman, L.

AU - Horiguchi, N.

AU - Spessot, A.

AU - Linten, D.

AU - Mocuta, A.

PY - 2017/1/31

Y1 - 2017/1/31

N2 - We study the stochastic NBTI degradation of p-FinFETs, in terms of ΔVth, ΔSS, and Δgm. We extend our Defect-Centric model to describe also the SS distribution in a population of devices of any area, at any stage of product aging. A large fraction of nanoscale devices is found to show a peak gm improvement after stress. We explain this effect in terms of the interaction of individual defects with the percolative channel conduction, and we propose a statistical description of gm aging. Our Vth, SS, and gm aging models are pluggable into reliability-enabled compact models to estimate design margins for a wide variety of circuits.

AB - We study the stochastic NBTI degradation of p-FinFETs, in terms of ΔVth, ΔSS, and Δgm. We extend our Defect-Centric model to describe also the SS distribution in a population of devices of any area, at any stage of product aging. A large fraction of nanoscale devices is found to show a peak gm improvement after stress. We explain this effect in terms of the interaction of individual defects with the percolative channel conduction, and we propose a statistical description of gm aging. Our Vth, SS, and gm aging models are pluggable into reliability-enabled compact models to estimate design margins for a wide variety of circuits.

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M3 - Contribución a la conferencia

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T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 15.3.1-15.3.4

BT - 2016 IEEE International Electron Devices Meeting, IEDM 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 62nd IEEE International Electron Devices Meeting, IEDM 2016

Y2 - 3 December 2016 through 7 December 2016

ER -

Franco J, Kaczer B, Mukhopadhyay S, Duhan P, Weckx P, Roussel PJ et al. Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs. En 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 15.3.1-15.3.4. 7838422. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2016.7838422

Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs

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