TFET and FinFET Hybrid Technologies for SRAM Cell: Performance Improvement over a Large VDD-Range

Romain Liautard, Lionel Trojman, Adriana Arevalo, Luis Miguel Procel

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2 Citas (Scopus)

Resumen

This work proposes and compares Static Random-Access Memory (SRAM) cells using hybrid technology for enabling a large range of voltage operation. Tunnel FET (TFET), FinFET, and conventional MOSFET (CMOS) technologies are considered to build different hybrid SRAM cells: TFET/CMOS, FinFET /CMOS and FinFET/TFET. In all cases, only CMOS and FinFET are used as cross-coupled inverters. For our study, four SRAM topologies (6T, 8T, 9T, 10T) were considered and the simulation was carried out for voltage range from 0.4V to 0.8V. The determination of the Writing and Reading Margin, the Delay and the Power Consumption of each device, enable us to determine that the best trade-off for hybrid is the FinFET/TFET SRAM.

Idioma originalInglés
Título de la publicación alojada2019 IEEE 4th Ecuador Technical Chapters Meeting, ETCM 2019
EditorialInstitute of Electrical and Electronics Engineers Inc.
ISBN (versión digital)9781728137643
DOI
EstadoPublicada - nov. 2019
Evento4th IEEE Ecuador Technical Chapters Meeting, ETCM 2019 - Guayaquil, Ecuador
Duración: 13 nov. 201915 nov. 2019

Serie de la publicación

Nombre2019 IEEE 4th Ecuador Technical Chapters Meeting, ETCM 2019

Conferencia

Conferencia4th IEEE Ecuador Technical Chapters Meeting, ETCM 2019
País/TerritorioEcuador
CiudadGuayaquil
Período13/11/1915/11/19

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