This work proposes and compares Static Random-Access Memory (SRAM) cells using hybrid technology for enabling a large range of voltage operation. Tunnel FET (TFET), FinFET, and conventional MOSFET (CMOS) technologies are considered to build different hybrid SRAM cells: TFET/CMOS, FinFET /CMOS and FinFET/TFET. In all cases, only CMOS and FinFET are used as cross-coupled inverters. For our study, four SRAM topologies (6T, 8T, 9T, 10T) were considered and the simulation was carried out for voltage range from 0.4V to 0.8V. The determination of the Writing and Reading Margin, the Delay and the Power Consumption of each device, enable us to determine that the best trade-off for hybrid is the FinFET/TFET SRAM.