Velocity and mobility investigation in 1-nm-EOT HfSiON on Si (110) and (100)-does the dielectric quality matter?

Lionel Trojman, Luigi Pantisano, Morin Dehan, Isabelle Ferain, Simone Severi, Herman E. Maes, Guido Groeseneken

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

8 Citas (Scopus)

Resumen

One of the fundamental questions for gate-stack scaling is whether the low-field mobility measured in long-channel devices is a good proxy for short-channel performance at high field. In this paper, we thoroughly investigate low- and high-field transports (velocity and mobility) in 1-nm-EOT high-κ materials on Si (100) and (110) down to cryogenic temperature. It is shown that scattering in Si substrate dominates the transport at high field, thus enabling relaxation of the low-field-mobility requirement for future scaling below 1-nm EOT.

Idioma originalInglés
Número de artículo5308383
Páginas (desde-hasta)3009-3017
Número de páginas9
PublicaciónIEEE Transactions on Electron Devices
Volumen56
N.º12
DOI
EstadoPublicada - dic. 2009

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