Voltage-Divider-Based Binary and Ternary Content-Addressable Memory (CAM) Exploiting Double-Barrier Magnetic Tunnel Junction

Alessandro Bedoya, Esteban Astudillo, Ramiro Taco, Luis Miguel Prócel

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

Resumen

The efficiency of massively parallel search operations, along with the non-volatile (NV) capability of magnetic tunnel junction (MTJ), has raised significant interest for NV content-addressable memories (NV-CAMs). We propose an eight-transistor-two-MTJ (8T2MTJ) NV-TCAM based on the voltage-divider configuration, and the use of skew-butter to drive the response of the search signal. The design was evaluated under exhaustive Monte Carlo simulations. The 144-bit NV-TCAM presents demonstrates competitive performance compared to the current state-of-the-art designs. In particular, when compared to the best state-of-the-art voltage-divider alternative, the proposed design offers better search time (62.47%). In comparison to other topologies, the proposed design presents less (48.6%) SER, reduced (2.17×) search energy per bit, and better (60.43%) cell area footprint. This, at the only cost of slight increase in search time. These findings highlight the promising characteristics of our proposed design and their potential for high-density, and reliable search operations of NV-CAMs.

Idioma originalInglés
Título de la publicación alojadaECTM 2023 - 2023 IEEE 7th Ecuador Technical Chapters Meeting
EditoresDavid Rivas Lalaleo, Manuel Ignacio Ayala Chauvin
EditorialInstitute of Electrical and Electronics Engineers Inc.
ISBN (versión digital)9798350338232
DOI
EstadoPublicada - 2023
Evento7th IEEE Ecuador Technical Chapters Meeting, ECTM 2023 - Ambato, Ecuador
Duración: 10 oct. 202313 oct. 2023

Serie de la publicación

NombreECTM 2023 - 2023 IEEE 7th Ecuador Technical Chapters Meeting

Conferencia

Conferencia7th IEEE Ecuador Technical Chapters Meeting, ECTM 2023
País/TerritorioEcuador
CiudadAmbato
Período10/10/2313/10/23

Huella

Profundice en los temas de investigación de 'Voltage-Divider-Based Binary and Ternary Content-Addressable Memory (CAM) Exploiting Double-Barrier Magnetic Tunnel Junction'. En conjunto forman una huella única.

Citar esto